GigaDevice GD25LQ32ETIGR
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GD25LQ32ETIGR
970-GD25LQ32ETIGR
存储器
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

32MBIT, 1.8V, SOP8 150MIL, INDUS
1最小包装量--
GD25LQ32ETIGR详情
GigaDevice GD25LQ32ETIGR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SOP
第一种连接器安装类型
Free Hanging (In-Line)
第二个连接器安装类型
Free Hanging (In-Line)
1st Contact Gender
Female
Package
Tape & Box (TB)
Cable Impedance
50 Ohms
Overall Impedance
50 Ohms
厂商
Amphenol Times Microwave Systems
1st Connector Mounting Feature
-
Product Status
活跃
2nd Contact Gender
Female
Frequency-Max
8 GHz
2nd Connector Mounting Feature
-
Cable Types
LMR 400
Memory Types
Non-Volatile
Maximum Clock Frequency
133 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
2 V
Minimum Operating Temperature
- 40 C
Supply Voltage-Min
1.65 V
Mounting Styles
SMD/SMT
Interface Type
SPI
操作温度
-40°C ~ 85°C
系列
LMR®
颜色
Black
技术
FLASH - NOR (SLC)
电压 - 供电
1.65V ~ 2V
入口保护
-
样式
RP-SMA to N-Type
内存大小
32Mbit
时钟频率
133 MHz
访问时间
6 ns
内存格式
FLASH
内存接口
SPI - Quad I/O, QPI
数据总线宽度
8 bit
组织结构
4 M x 8
写入周期时间 - 字符、页面
60µs, 2.4ms
第一个连接器
RP-SMA Plug
第二个连接器
N-Type Jack
特征
-
组织的记忆
4M x 8
长度
354.3 (9.0m) 29.5
GD25LQ32ETIGR拓展信息
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited







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