GigaDevice GD25Q20ESIGR
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GD25Q20ESIGR详情
GigaDevice GD25Q20ESIGR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOP-8
安装类型
表面贴装
供应商器件包装
8-SOP
Mounting Styles
SMD/SMT
Supply Voltage-Min
2.7 V
Active Read Current - Max
20 mA
Interface Type
SPI
Maximum Clock Frequency
120 MHz
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Factory Pack QuantityFactory Pack Quantity
2000
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
厂商
GigaDevice Semiconductor (HK) Limited
Product Status
活跃
Memory Types
Non-Volatile
Supply Voltage-Max
3.6 V
包装
切割胶带
操作温度
-40°C ~ 85°C (TA)
系列
-
技术
FLASH - NAND (SLC)
电压 - 供电
2.7V ~ 3.6V
内存大小
2 Mbit
速度
120 MHz
时钟频率
133 MHz
电源电流-最大值
20 mA
访问时间
7 ns
内存格式
FLASH
内存接口
SPI - Quad I/O
数据总线宽度
8 bit
组织结构
256 k x 8
写入周期时间 - 字符、页面
70µs, 2ms
组织的记忆
256K x 8
GD25Q20ESIGR拓展信息
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited








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