GigaDevice GD5F2GQ4UBYIGR
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GD5F2GQ4UBYIGR
970-GD5F2GQ4UBYIGR
存储器
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大陆
立即发货

2Gb SPI NAND Flash 1.65V-2.0V WSON8 (8*6mm)
1最小包装量--
GD5F2GQ4UBYIGR详情
GigaDevice GD5F2GQ4UBYIGR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
8
Package Description
HSON,
Package Style
SMALL OUTLINE, HEAT SINK/SLUG
Number of Words Code
512000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
GD5F2GQ4UBYIGR
Clock Frequency-Max (fCLK)
120 MHz
Number of Words
536870912 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
HSON
Package Shape
RECTANGULAR
Manufacturer
GigaDevice Semiconductor (Beijing) Inc
Part Life Cycle Code
接触制造商
Ihs Manufacturer
GIGADEVICE SEMICONDUCTOR INC
Risk Rank
5.74
附加功能
IT ALSO HAVE MEMORY WIDTH X1
技术
CMOS
端子位置
DUAL
终端形式
无铅
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1.27 mm
Reach合规守则
unknown
JESD-30代码
R-PDSO-N8
温度等级
INDUSTRIAL
操作模式
SYNCHRONOUS
组织结构
512MX4
内存宽度
4
记忆密度
2147483648 bit
并行/串行
SERIAL
内存IC类型
FLASH
编程电压
3.3 V
备用内存宽度
2
电压 - 供电 (最大值)
3.6 V
电压 - 供电 (最小值)
2.7 V
宽度
6 mm
长度
8 mm
GD5F2GQ4UBYIGR拓展信息
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited







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