GigaDevice Semiconductor (HK) Limited GD25S512MDYIGR
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GD25S512MDYIGR
970-GD25S512MDYIGR
存储器
8-WDFN Exposed Pad
大陆
立即发货

3.3V Uniform Sector Dual and Quad Serial Flash
--最小包装量--
GD25S512MDYIGR详情
GigaDevice Semiconductor (HK) Limited GD25S512MDYIGR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
4 Weeks
安装类型
表面贴装
包装/外壳
8-WDFN Exposed Pad
Memory Types
Non-Volatile
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
2.7V~3.6V
内存大小
512Mb 64M x 8
时钟频率
104MHz
内存格式
FLASH
内存接口
SPI - Quad I/O
写入周期时间 - 字符、页面
50μs, 2.4ms
RoHS状态
ROHS3 Compliant
GD25S512MDYIGR拓展信息
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited







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