Glenair 806-039-NF16E2G2SE

包装/外壳

SOT-227-4

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

34 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

830 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

1.058219 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10

Mounting Styles

螺钉安装

Manufacturer

IXYS

Brand

IXYS

Tradename

HiPerFET

Rds On - Drain-Source Resistance

125 mOhms

RoHS

Details

Typical Turn-Off Delay Time

107 ns

Id - Continuous Drain Current

44 A

Package

零售包装

厂商

Glenair

Product Status

活跃

系列

X-Class

包装

Tube

类型

HiperFET

子类别

Discrete Semiconductor Modules

技术

Si

配置

Single

通道数量

1 Channel

上升时间

13 ns

产品类别

Discrete Semiconductor Modules

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules