Glenair D38999/42FC4AB

包装/外壳

TO-263-3

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

37 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB6R95C6XT SP000660620 IPB60R950C6ATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

13 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

950 mOhms

RoHS

Details

Typical Turn-Off Delay Time

60 nS

Id - Continuous Drain Current

4.4 A

系列

CoolMOS C6

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

8 nS

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

9.25 mm

高度

4.4 mm

长度

10 mm