Glenair D38999/44FD97PR

包装/外壳

TO-262-3

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPI7N1S312XK SP000407124 IPI70N10S312AKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

51 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

11.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

70 A

系列

OptiMOS-T

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

8 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.5 mm

高度

9.45 mm

长度

10.2 mm