GOFORD G2K2P10SE

包装/外壳

8-SOIC (0.154, 3.90mm Width)

安装类型

表面贴装

供应商器件包装

8-SOP

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Goford Semiconductor

Power Dissipation (Max)

3.1W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

200mOhm @ 3A, 10V

输入电容(Ciss)(Max)@Vds

1653 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-