Hammond Manufacturing AP30N30WI
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AP30N30WI datasheet pdf and Unclassified product details from Hammond Manufacturing stock available at utmel
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AP30N30WI详情
Hammond Manufacturing AP30N30WI重要参数规格及、参数值,及相似型号如下:
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表面安装
NO
终端数量
3
晶体管元件材料
SILICON
RoHS
Compliant
Package Description
FLANGE MOUNT, R-PSFM-T3
Package Style
FLANGE MOUNT
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Manufacturer Part Number
AP30N30WI
Package Shape
RECTANGULAR
Manufacturer
Advanced Power Electronics Corp
Number of Elements
1
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER ELECTRONICS CORP
Risk Rank
5.84
Part Package Code
TO-3PF
Drain Current-Max (ID)
30 A
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
引脚数量
3
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.068 Ω
脉冲漏极电流-最大值(IDM)
120 A
DS 击穿电压-最小值
250 V
雪崩能量等级(Eas)
450 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
达到SVHC
compliant
AP30N30WI拓展信息







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