Honeywell GL85614

包装/外壳

TO-263-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

23 ns

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

200 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Forward Transconductance - Min

6 S

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

32 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

740 mOhms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

10 A

Package

Bulk

厂商

霍尼韦尔传感与生产力解决方案

Product Status

Obsolete

系列

IXFA10N60P

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

27 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET