IDEC HW1K-2CP10

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

75 V

Typical Turn-On Delay Time

26 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qualification

AEC-Q101

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

7000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP8N8S27XK SP000219040 IPP80N08S207AKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

180 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

5.8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

61 ns

Id - Continuous Drain Current

80 A

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

50 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm