Infineon BSC057N03LS G

包装/外壳

TDSON-8

材料

Aluminum

形状

Square, Fins

包装冷却

Assorted (BGA, LGA, CPU, ASIC...)

材料处理

蓝色阳极氧化

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

4.7 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

45 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004367 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

36 S

Channel Mode

Enhancement

Part # Aliases

SP000275113 BSC57N3LSGXT BSC057N03LSGATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

30 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

4.8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

19 ns

Id - Continuous Drain Current

71 A

系列

pushPIN™

包装

MouseReel

零件状态

活跃

类型

顶部安装

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

附着方法

推销

离底高度(鳍的高度)

0.790 (20.00mm)

强制空气流动时的热阻

3.91°C/W @ 100 LFM

上升时间

3.6 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

自然环境下的热阻

--

温度上升时的耗散功率

--

产品类别

MOSFET

宽度

2.126 (54.00mm)

长度

2.126 (54.01mm)

直径

--

高度

1.27 mm