BSD235CH6327XT详情
Infineon BSD235CH6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-363-6
Package
Bulk
Base Product Number
120467
厂商
Molex
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
3.8 ns, 3.8 ns
Vgs th - Gate-Source Threshold Voltage
700 mV, 1.2 V
Qualification
AEC-Q101
Pd - Power Dissipation
500 mW
Transistor Polarity
N-Channel, P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Unit Weight
0.000265 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
9000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
2 S, 700 mS
Channel Mode
Enhancement
Part # Aliases
BSD235C H6327 SP000917610 BSD235CH6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Qg - Gate Charge
340 pC, 400 pC
Rds On - Drain-Source Resistance
266 mOhms, 745 mOhms
RoHS
Details
Typical Turn-Off Delay Time
4.5 ns, 5.1 ns
Id - Continuous Drain Current
950 mA, 530 mA
系列
*
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
上升时间
3.6 ns, 5 ns
产品类别
MOSFET
晶体管类型
1 N-Channel, 1 P-Channel
产品类别
MOSFET
宽度
1.25 mm
高度
0.9 mm
长度
2 mm
BSD235CH6327XT拓展信息








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