Infineon BSD840NH6327XT

包装/外壳

SOT-363-6

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

1.9 ns, 1.9 ns

Vgs th - Gate-Source Threshold Voltage

550 mV

Qualification

AEC-Q101

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000265 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

9000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

2.5 S, 2.5 S

Channel Mode

Enhancement

Part # Aliases

SP000917654 BSD840NH6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

260 pC

Rds On - Drain-Source Resistance

270 mOhms, 373 mOhms

RoHS

Details

Typical Turn-Off Delay Time

7.8 ns, 7.8 ns

Id - Continuous Drain Current

880 mA

系列

BSD840

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

上升时间

2.2 ns, 2.2 ns

产品类别

MOSFET

晶体管类型

2 N-Channel

产品类别

MOSFET

宽度

1.25 mm

高度

0.9 mm

长度

2 mm