Infineon BSO613SPVGXUMA1

工厂交货时间

26 Weeks

包装/外壳

SOIC-8

安装类型

表面贴装

供应商器件包装

PG-DSO-8-6

Continuous Drain Current

3.44(A)

Drain-Source On-Volt

60(V)

Operating Temperature Classification

Military

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

60 V

Moisture Sensitive

有

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

2.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

2.2 S

Part # Aliases

BSO613SPV G SP005353854

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

110 mOhms

RoHS

Details

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

3.44 A

Product Status

活跃

Power Dissipation (Max)

2.5W (Ta)

厂商

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

3.44A (Ta)

Base Product Number

BSO613

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Package Description

,

Moisture Sensitivity Levels

3

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSO613SPVGXUMA1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.28

包装

卷带

系列

Automotive, AEC-Q101, SIPMOS®

操作温度

-55°C ~ 150°C (TJ)

类型

小信号

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

极性

P

通道数量

1 Channel

功率耗散

2.5(W)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

130mOhm @ 3.44A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

875 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

30 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET

达到SVHC

compliant