Infineon BSS315PH6327XT

包装/外壳

SOT-23-3

Package

Bulk

Base Product Number

MC10XSC425

厂商

飞思卡尔半导体

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

500 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

2.3 nC

Rds On - Drain-Source Resistance

113 mOhms

Id - Continuous Drain Current

1.5 A

系列

*

技术

Si

通道数量

1 Channel