Infineon BSS316NH6327XT

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

600 pC

Rds On - Drain-Source Resistance

119 mOhms

Id - Continuous Drain Current

1.4 A

系列

*

零件状态

活跃

技术

Si

通道数量

1 Channel