Infineon FF11MR12W1M1B70BPSA1

安装类型

螺钉安装

包装/外壳

Module

供应商器件包装

AG-EASY1B

Continuous Drain Current Id

100

Number of Elements per Chip

2

Package Type

AG-EASY1B

Vr - Reverse Voltage

1200 V

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, 20 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

24

Mounting Styles

压装

Part # Aliases

FF11MR12W1M1_B70 SP004486464

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Package

Tray

Current - Continuous Drain (Id) @ 25℃

100A (Tj)

厂商

Infineon Technologies

Product Status

Obsolete

系列

FF11MR12W1M1

包装

Tray

操作温度

-40°C ~ 150°C (TJ)

类型

Half Bridge Module

子类别

Discrete Semiconductor Modules

技术

SiC

功率耗散

20

功率 - 最大

20mW (Tc)

场效应管类型

2 N-Channel (Half Bridge)

Rds On(Max)@Id,Vgs

11.3mOhm @ 100A, 15V

不同 Id 时 Vgs(th)（最大值）

5.55V @ 40mA

输入电容(Ciss)(Max)@Vds

7360pF @ 800V

门极电荷(Qg)(最大)@Vgs

248nC @ 15V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

信道型

Dual N

场效应管特性

Silicon Carbide (SiC)

产品

IGBT碳化硅模块

Vf-正向电压

4.6 V

产品类别

Discrete Semiconductor Modules