FF11MR12W1M1PB11BPSA1详情
Infineon FF11MR12W1M1PB11BPSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
螺钉安装
包装/外壳
Module
供应商器件包装
AG-EASY1B-2
Continuous Drain Current Id
100
Number of Elements per Chip
2
Package Type
AG-EASY1B
Vr - Reverse Voltage
1200 V
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, 20 V
Unit Weight
1.238727 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
30
Mounting Styles
压装
Part # Aliases
FF11MR12W1M1P_B11 SP005035982
Manufacturer
Infineon
Brand
Infineon Technologies
Tradename
CoolSiC ~ EasyDUAL ~ PressFIT
Package
Tray
Base Product Number
FF11MR12
Current - Continuous Drain (Id) @ 25℃
100A (Tj)
厂商
Infineon Technologies
Product Status
Obsolete
系列
CoolSiC Module
包装
Tray
操作温度
-40°C ~ 150°C (TJ)
类型
Half Bridge Module
子类别
Discrete Semiconductor Modules
技术
SiC
功率耗散
20
功率 - 最大
20mW
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
11.3mOhm @ 100A, 15V
不同 Id 时 Vgs(th)(最大值)
5.55V @ 40mA
输入电容(Ciss)(Max)@Vds
7360pF @ 800V
门极电荷(Qg)(最大)@Vgs
248nC @ 15V
漏源电压 (Vdss)
1200V (1.2kV)
产品类别
Discrete Semiconductor Modules
信道型
Dual N
场效应管特性
Silicon Carbide (SiC)
产品
IGBT碳化硅模块
Vf-正向电压
4.6 V
产品类别
Discrete Semiconductor Modules
FF11MR12W1M1PB11BPSA1拓展信息








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