Infineon IPI084N06L3 G

包装/外壳

TO-262-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

79 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Forward Transconductance - Min

35 S

Channel Mode

Enhancement

Part # Aliases

SP001065242 IPI084N06L3GXKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

29 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

7 mOhms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

50 A

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPI084N06L3G

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.82

Part Package Code

TO-262AA

Drain Current-Max (ID)

50 A

系列

OptiMOS 3

包装

Tube

ECCN 代码

EAR99

附加功能

逻辑电平兼容

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

引脚数量

3

JESD-30代码

R-PSIP-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

晶体管应用

SWITCHING

上升时间

26 ns

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-262AA

漏极-源极导通最大电阻

0.0084 Ω

脉冲漏极电流-最大值(IDM)

200 A

DS 击穿电压-最小值

60 V

雪崩能量等级（Eas）

43 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

产品类别

MOSFET

宽度

4.5 mm

高度

9.45 mm

长度

10.2 mm

达到SVHC

compliant