Infineon IPI80P03P4-05

包装/外壳

TO-262-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

137 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000396316 IPI8P3P45XK IPI80P03P405AKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

100 nC

Rds On - Drain-Source Resistance

4.7 mOhms

RoHS

Details

Id - Continuous Drain Current

80 A

Drain Current-Max (ID)

80 A

Part Package Code

TO-262AA

Risk Rank

8.63

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

Obsolete

Number of Elements

1

Package Shape

RECTANGULAR

Manufacturer Part Number

IPI80P03P4-05

Rohs Code

有

Operating Temperature-Max

175 °C

Reflow Temperature-Max (s)

未说明

Package Body Material

PLASTIC/EPOXY

Moisture Sensitivity Levels

1

Package Style

IN-LINE

Package Description

IN-LINE, R-PSIP-T3

系列

IPI80P03

包装

Tube

无铅代码

有

ECCN 代码

EAR99

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

引脚数量

3

JESD-30代码

R-PSIP-T3

资历状况

不合格

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

产品类别

MOSFET

晶体管类型

1 P-Channel

JEDEC-95代码

TO-262AA

最大漏极电流 (Abs) (ID)

80 A

漏极-源极导通最大电阻

0.005 Ω

脉冲漏极电流-最大值(IDM)

320 A

DS 击穿电压-最小值

30 V

雪崩能量等级（Eas）

410 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

137 W

产品类别

MOSFET

宽度

4.5 mm

高度

9.45 mm

长度

10.2 mm

达到SVHC

compliant