Infineon IPU50R1K4CE

工厂交货时间

1 Week

包装/外壳

TO-251-3

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

6.5 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

42 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP001022958 IPU50R1K4CEBKMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8.2 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

1.26 Ohms

RoHS

Details

Typical Turn-Off Delay Time

23 ns

Id - Continuous Drain Current

4.8 A

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPU50R1K4CE

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

8.59

系列

CoolMOS CE

包装

Tube

JESD-609代码

e3

无铅代码

无

ECCN 代码

EAR99

端子表面处理

Tin (Sn)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

配置

Single

通道数量

1 Channel

上升时间

6 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

2.38 mm

高度

6.22 mm

长度

6.73 mm

达到SVHC

compliant