Infineon IPW65R125C7

包装/外壳

TO-247-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

101 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP001080138 IPW65R125C7XKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

35 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

111 mOhms

RoHS

Details

Typical Turn-Off Delay Time

71 ns

Id - Continuous Drain Current

18 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPW65R125C7

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.47

Drain Current-Max (ID)

18 A

系列

CoolMOS C7

包装

Tube

附加功能

HIGH RELIABILITY

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

JESD-30代码

R-PSFM-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

15 ns

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-247

漏极-源极导通最大电阻

0.125 Ω

脉冲漏极电流-最大值(IDM)

75 A

DS 击穿电压-最小值

650 V

雪崩能量等级（Eas）

89 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

产品类别

MOSFET

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm

达到SVHC

compliant