Infineon IRF60SC241ARMA1

工厂交货时间

15 Weeks

安装类型

表面贴装

包装/外壳

TO-263-7

供应商器件包装

PG-TO263-7

Continuous Drain Current Id

363

Number of Elements per Chip

1

Package Type

TO-263-7

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

417 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Part # Aliases

IRF60SC241 SP001646066

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

311 nC

Rds On - Drain-Source Resistance

950 uOhms

RoHS

Details

Id - Continuous Drain Current

360 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

IRF60SC241

Current - Continuous Drain (Id) @ 25℃

360A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

2.4W (Ta), 417W (Tc)

Product Status

活跃

Package Description

,

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IRF60SC241ARMA1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.3

系列

StrongIRFET

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

7

通道数量

1 Channel

功率耗散

417

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.3mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.7V @ 250µA

输入电容(Ciss)(Max)@Vds

16000 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

388 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET