SP000011176详情
Infineon SP000011176重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
330 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1 V
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
45000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
300 MHz
Part # Aliases
SMBT2222AE6327HTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
600 mA
RoHS
Details
Collector- Emitter Voltage VCEO Max
40 V
系列
SMBT2222
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
75 V
产品类别
Bipolar Transistors - BJT
SP000011176拓展信息








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