Infineon Technologies IPZ65R095C7

包装/外壳

TO-247-4

安装类型

通孔

供应商器件包装

PG-TO247-4-1

Manufacturer Part Number

IPZ65R095C7

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

,

Risk Rank

2.32

Reflow Temperature-Max (s)

未说明

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

128 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP001080130 IPZ65R095C7XKSA1

Brand

Infineon Technologies

Qg - Gate Charge

45 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

84 mOhms

RoHS

Details

Typical Turn-Off Delay Time

60 ns

Id - Continuous Drain Current

24 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

128W (Tc)

Product Status

活跃

系列

CoolMOS C7

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

95mOhm @ 11.8A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 590µA

输入电容(Ciss)(Max)@Vds

2140 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

45 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm