Infineon Technologies AG BAS12504WE6327XT
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BAS12504WE6327XT
1211-BAS12504WE6327XT
二极管 - 射频
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Diode Schottky Si 0.1A Automotive 3-Pin SOT-323 T/R
1最小包装量--
BAS12504WE6327XT详情
Infineon Technologies AG BAS12504WE6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
25
Maximum Continuous Forward Current (A)
0.1
Peak Non-Repetitive Surge Current (A)
0.5
Peak Forward Voltage (V)
Peak Reverse Current (uA)
0.15
Maximum Diode Capacitance (pF)
1.1
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Automotive
有
AEC Qualified Number
AEC-Q101
Standard Package Name
SOT-323
Supplier Package
SOT-323
Military
无
Mounting
表面贴装
Package Height
0.9(Max)
Package Length
2
Package Width
1.25
PCB changed
3
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
类型
肖特基二极管
引脚数量
3
配置
双系列
RoHS状态
符合RoHS标准
BAS12504WE6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。