Infineon Technologies AG BAS12507WE6327
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BAS12507WE6327
1211-BAS12507WE6327
二极管 - 射频
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Rectifier Diode Schottky Si 0.1A Automotive 4-Pin(3 Tab) SOT-343 T/R
1最小包装量--
BAS12507WE6327详情
Infineon Technologies AG BAS12507WE6327重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
Si
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
25
Maximum Continuous Forward Current (A)
0.1
Peak Non-Repetitive Surge Current (A)
0.5
Peak Forward Voltage (V)
Peak Reverse Current (uA)
0.15
Maximum Diode Capacitance (pF)
1.1
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
AEC Qualified
有
AEC Qualified Number
AEC-Q101
Standard Package Name
SOT-343
Supplier Package
SOT-343
Military
无
Mounting
表面贴装
Package Height
0.9(Max)
Package Length
2
Package Width
1.25
PCB changed
3
Tab
Tab
Lead Shape
Gull-wing
Moisture Sensitivity Levels
1
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
BAS125-07W-E6327
Power Dissipation (Max)
0.25 W
Manufacturer
Infineon Technologies AG
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Forward Voltage-Max (VF)
0.4 V
Risk Rank
5.84
包装
卷带
零件状态
Obsolete
ECCN 代码
EAR99
类型
肖特基二极管
子类别
其他二极管
Reach合规守则
unknown
引脚数量
4
配置
双并联
反向电流-最大值
0.15 µA
反向测试电压
25 V
RoHS状态
符合RoHS标准
BAS12507WE6327拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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