Infineon Technologies AG SDT12S60XK
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SDT12S60XK
1211-SDT12S60XK
二极管 - 射频
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Rectifier Diode Schottky SiC 600V 12A 2-Pin(2 Tab) TO-220
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SDT12S60XK详情
Infineon Technologies AG SDT12S60XK重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
SiC
ECCN (US)
EAR99
Peak Reverse Repetitive Voltage (V)
600
Maximum Continuous Forward Current (A)
12
Peak Non-Repetitive Surge Current (A)
36
Peak Forward Voltage (V)
1.7
Peak Reverse Current (uA)
400
Maximum Junction Ambient Thermal Resistance
62K/W
Maximum Diode Capacitance (pF)
450(Typ)
Maximum Power Dissipation (mW)
88200
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Automotive
无
Standard Package Name
TO-220
Supplier Package
TO-220
Military
无
Mounting
通孔
Package Height
9.2
Package Length
9.9
Package Width
4.4
PCB changed
2
Tab
Tab
零件状态
Obsolete
类型
肖特基二极管
引脚数量
2
配置
Single
RoHS状态
符合RoHS标准
SDT12S60XK拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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