Integrated Silicon Solution Inc IS61SF6432-10PQI
- 收藏
- 对比
IS61SF6432-10PQI
2261-IS61SF6432-10PQI
存储器
--
大陆
立即发货

Cache SRAM, 64KX32, 10ns, CMOS, PQFP100, PLASTIC, QFP-100
1最小包装量--
IS61SF6432-10PQI详情
Integrated Silicon Solution Inc IS61SF6432-10PQI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
QFP
Package Description
PLASTIC, QFP-100
Access Time-Max
10 ns
Clock Frequency-Max (fCLK)
66 MHz
Number of Words
65536 words
Number of Words Code
64000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LQFP
Package Equivalence Code
QFP100,.7X.9
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
功能数量
1
端子间距
0.65 mm
Reach合规守则
unknown
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.63 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.3 mA
组织结构
64KX32
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
32
待机电流-最大值
0.02 A
记忆密度
2097152 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
缓存SRAM
待机电压-最小值
3.14 V
长度
20 mm
宽度
14 mm
IS61SF6432-10PQI拓展信息
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
Silicon Storage Tech
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc








哦! 它是空的。