Integrated Silicon Solution, Inc. (ISSI) IS25LQ512B-JULE
- 收藏
- 对比
IS25LQ512B-JULE
1266-IS25LQ512B-JULE
集成电路(IC)
8-UFDFN Exposed Pad
大陆
立即发货

Flash, Multi I/O Quad SPI, 2.3-3.6V, -40 to 125°C, 8-contact USON 2x3mm, RoHS
1最小包装量--
IS25LQ512B-JULE详情
Integrated Silicon Solution, Inc. (ISSI) IS25LQ512B-JULE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
安装类型
表面贴装
包装/外壳
8-UFDFN Exposed Pad
供应商器件包装
8-USON (2x3)
终端数量
8
Manufacturer Part Number
IS25LQ512B-JULE
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Package Description
VSON,
Risk Rank
5.73
Clock Frequency-Max (fCLK)
104 MHz
Number of Words
524288 words
Number of Words Code
512000
Operating Temperature-Max
105 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
VSON
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, VERY THIN PROFILE
Supply Voltage-Nom (Vsup)
3 V
Package
Tape & Reel (TR)
Base Product Number
IS25LQ512
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
Obsolete
Memory Types
Non-Volatile
操作温度
-40°C ~ 105°C (TA)
系列
-
HTS代码
8542.32.00.51
电压 - 供电
2.3V ~ 3.6V
端子位置
DUAL
终端形式
无铅
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
JESD-30代码
R-PDSO-N8
电源电压-最大值(Vsup)
3.6 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
2.3 V
内存大小
512Kbit
操作模式
SYNCHRONOUS
时钟频率
104 MHz
访问时间
8 ns
内存格式
FLASH
内存接口
SPI - Quad I/O
组织结构
512KX1
座位高度-最大
0.6 mm
内存宽度
1
写入周期时间 - 字符、页面
800µs
记忆密度
524288 bit
并行/串行
SERIAL
内存IC类型
FLASH
编程电压
3 V
组织的记忆
64K x 8
长度
3 mm
宽度
2 mm
IS25LQ512B-JULE拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







哦! 它是空的。