IS25WP01G-RILE
IS25WP01G-RILE

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价格梯度

内地含税价

  • 1

    ¥182.340062

  • 10

    ¥172.018929

  • 100

    ¥162.282005

  • 500

    ¥153.096235

  • 1000

    ¥144.430404

Integrated Silicon Solution, Inc. (ISSI) IS25WP01G-RILE

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型号

IS25WP01G-RILE

utmel 编号

1266-IS25WP01G-RILE

商品类别

存储器

封装

LFBGA_24

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

NOR Flash 1Gb QPI/QSPI, 24-ball LFBGA 6x8mm 5x5 ball array, RoHS, reset pin

起订量

--最小包装量--

单价:

总价:

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IS25WP01G-RILE
IS25WP01G-RILE Integrated Silicon Solution, Inc. (ISSI) NOR Flash 1Gb QPI/QSPI, 24-ball LFBGA 6x8mm 5x5 ball array, RoHS, reset pin

单价: $

合计:

库存:7000

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IS25WP01G-RILE详情

Integrated Silicon Solution, Inc. (ISSI) IS25WP01G-RILE重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • 包装/外壳

    LFBGA_24

  • 安装类型

    表面贴装

  • 供应商器件包装

    24-LFBGA (6x8)

  • RoHS

    Details

  • Mounting Styles

    SMD/SMT

  • Supply Voltage-Min

    1.7 V

  • Active Read Current - Max

    45 mA

  • Interface Type

    SPI

  • Maximum Clock Frequency

    104 MHz

  • Timing Type

    Synchronous

  • Minimum Operating Temperature

    - 40 C

  • Maximum Operating Temperature

    + 105 C

  • Factory Pack QuantityFactory Pack Quantity

    480

  • Supplier Package

    LFBGA

  • Typical Operating Supply Voltage

    1.8 V

  • Minimum Operating Supply Voltage

    1.7 V

  • Block Organization

    Symmetrical

  • Number of Words

    128 Mb

  • Maximum Operating Supply Voltage

    1.95 V

  • Cell Type

    NOR

  • Mounting

    表面贴装

  • Package

    Bulk

  • 厂商

    ISSI, Integrated Silicon Solution Inc

  • Product Status

    活跃

  • Memory Types

    Non-Volatile

  • Supply Voltage-Max

    1.95 V

  • 系列

    IS25WP01G

  • 包装

    Tray

  • 操作温度

    -40 to 105 °C

  • 技术

    FLASH - NOR (SLC)

  • 电压 - 供电

    1.7V ~ 1.95V

  • 引脚数量

    24

  • 内存大小

    1 Gbit

  • 时钟频率

    104 MHz

  • 访问时间

    10 ns

  • 内存格式

    FLASH

  • 内存接口

    SPI - Quad I/O, QPI, DTR

  • 建筑学

    Sectored

  • 数据总线宽度

    8 bit

  • 组织结构

    128 M x 8

  • 写入周期时间 - 字符、页面

    50µs, 1ms

  • 密度

    1 Gbit

  • 筛选水平

    扩展工业

  • 编程电压

    1.7 to 1.95 V

  • 引导模块

  • 组织的记忆

    128M x 8

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