Integrated Silicon Solution, Inc. (ISSI) IS34ML02G084-BLI-TR
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IS34ML02G084-BLI-TR
1266-IS34ML02G084-BLI-TR
存储器
VFBGA-63
大陆
立即发货

NAND Flash 2Gbit (x8, 4 bit ECC), 63 BALL VFBGA, 3V, RoHS, IT, T&R
1最小包装量--
IS34ML02G084-BLI-TR详情
Integrated Silicon Solution, Inc. (ISSI) IS34ML02G084-BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
VFBGA-63
安装类型
表面贴装
引脚数
63
供应商器件包装
63-VFBGA (9x11)
Factory Pack QuantityFactory Pack Quantity
2500
Memory Types
NAND
Maximum Clock Frequency
33 MHz
Active Read Current - Max
30 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Supply Voltage-Min
2.7 V
Interface Type
Parallel
Mounting Styles
SMD/SMT
RoHS
Details
Supplier Package
VFBGA
Typical Operating Supply Voltage
3.3000 V
Minimum Operating Supply Voltage
2.7 V
Timing Type
Synchronous
ECC Support
有
Block Organization
Symmetrical
Number of Words
256 MWords
Maximum Operating Supply Voltage
3.6 V
Cell Type
SLC NAND
Mounting
表面贴装
Package
Tape & Reel (TR)
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Supply Voltage-Max
3.6 V
Usage Level
Industrial grade
包装
Reel
系列
IS34ML02G084
操作温度
-40 to 85 °C
技术
FLASH - NAND (SLC)
电压 - 供电
2.7V ~ 3.6V
内存大小
1 Gbit
电源电流-最大值
30 mA
访问时间
20 ns
内存格式
FLASH
内存接口
Parallel
建筑学
Sectored
数据总线宽度
16 bit
写入周期时间 - 字符、页面
25ns
地址总线宽度
29 Bit
密度
2 Gbit
筛选水平
Industrial
编程电压
2.7, 3.6 V
引导模块
无
产品
NAND闪存
组织的记忆
256M x 8
IS34ML02G084-BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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