Integrated Silicon Solution, Inc. (ISSI) IS43DR32160C-3DBLI
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IS43DR32160C-3DBLI
1266-IS43DR32160C-3DBLI
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DRAM Chip DDR2 SDRAM 512M-Bit 16Mx32 1.8V 126-Pin TW-BGA
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IS43DR32160C-3DBLI详情
Integrated Silicon Solution, Inc. (ISSI) IS43DR32160C-3DBLI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
生命周期状态
Production (Last Updated: 2 years ago)
表面安装
YES
终端数量
126
Manufacturer Part Number
IS43DR32160C-3DBLI
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
BGA
Package Description
TFBGA, BGA126,12X16,32
Risk Rank
5.39
Access Time-Max
0.45 ns
Clock Frequency-Max (fCLK)
333 MHz
Number of Words
16777216 words
Number of Words Code
16000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA126,12X16,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Nom (Vsup)
1.8 V
RoHS
Non-Compliant
ECCN 代码
EAR99
附加功能
AUTO/SELF REFRESH
HTS代码
8542.32.00.28
端子位置
BOTTOM
终端形式
BALL
功能数量
1
端子间距
0.8 mm
Reach合规守则
compliant
引脚数量
126
JESD-30代码
R-PBGA-B126
资历状况
不合格
电源电压-最大值(Vsup)
1.9 V
电源
1.8 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
1.7 V
端口的数量
1
操作模式
SYNCHRONOUS
电源电流-最大值
0.45 mA
组织结构
16MX32
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
32
待机电流-最大值
0.012 A
记忆密度
536870912 bit
I/O类型
COMMON
内存IC类型
DDR DRAM
刷新周期
8192
顺序突发长度
4,8
交错突发长度
4,8
访问模式
四库页面突发
自我刷新
YES
长度
13.5 mm
宽度
10.5 mm
IS43DR32160C-3DBLI拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







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