Integrated Silicon Solution, Inc. (ISSI) IS43LD32160A-18BLI
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IS43LD32160A-18BLI
1266-IS43LD32160A-18BLI
存储器
FBGA-134
大陆
立即发货

DRAM LPDDR2 512Mb 533MHz 64Mx32 IT
1最小包装量--
IS43LD32160A-18BLI详情
Integrated Silicon Solution, Inc. (ISSI) IS43LD32160A-18BLI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
12 Weeks
包装/外壳
FBGA-134
表面安装
YES
终端数量
134
RoHS
Details
Mounting Styles
SMD/SMT
Maximum Clock Frequency
533 MHz
Supply Voltage-Min
1.14 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
171
Supply Voltage-Max
1.95 V
Package Description
TFBGA,
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Number of Words Code
16000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
IS43LD32160A-18BLI
Number of Words
16777216 words
Supply Voltage-Nom (Vsup)
1.2 V
Package Code
TFBGA
Package Shape
RECTANGULAR
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Risk Rank
5.69
系列
IS43LD32160A
JESD-609代码
e1
ECCN 代码
EAR99
类型
SDRAM Mobile - LPDDR2
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
附加功能
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
0.65 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B134
温度等级
INDUSTRIAL
内存大小
512 Mbit
端口的数量
1
操作模式
SYNCHRONOUS
电源电流-最大值
25 mA
访问时间
18 ns
数据总线宽度
16 bit
组织结构
16 M x 32
座位高度-最大
1.1 mm
内存宽度
32
记忆密度
536870912 bit
内存IC类型
DDR DRAM
电压 - 供电 (最大值)
1.3 V
电压 - 供电 (最小值)
1.14 V
访问模式
四库页面突发
自我刷新
YES
宽度
10 mm
长度
11.5 mm
IS43LD32160A-18BLI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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