Integrated Silicon Solution, Inc. (ISSI) IS61C64B-10J
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IS61C64B-10J
1266-IS61C64B-10J
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IS61C64B-10J datasheet pdf and Integrated Circuits (ICs) product details from Integrated Silicon Solution, Inc. (ISSI) stock available at utmel
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IS61C64B-10J详情
Integrated Silicon Solution, Inc. (ISSI) IS61C64B-10J重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
28
Manufacturer Part Number
IS61C64B-10J
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
SOJ
Package Description
0.300 INCH, PLASTIC, SOJ-28
Risk Rank
5.85
Access Time-Max
10 ns
Moisture Sensitivity Levels
3
Number of Words
8192 words
Number of Words Code
8000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
SOJ
Package Equivalence Code
SOJ28,.34
Package Shape
RECTANGULAR
Package Style
小概要
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
未说明
JESD-609代码
e0
无铅代码
无
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
LOW POWER STANDBY MODE; AUTOMATIC POWER-DOWN
HTS代码
8542.32.00.41
端子位置
DUAL
终端形式
J BEND
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1.27 mm
Reach合规守则
compliant
引脚数量
28
JESD-30代码
R-PDSO-J28
资历状况
不合格
电源电压-最大值(Vsup)
5.25 V
电源
5 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
4.75 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.185 mA
组织结构
8KX8
输出特性
3-STATE
座位高度-最大
3.556 mm
内存宽度
8
待机电流-最大值
0.01 A
记忆密度
65536 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
4.75 V
长度
18.415 mm
宽度
7.62 mm
IS61C64B-10J拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







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