Integrated Silicon Solution, Inc. (ISSI) IS61LV5128-10B
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IS61LV5128-10B
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IS61LV5128-10B datasheet pdf and Integrated Circuits (ICs) product details from Integrated Silicon Solution, Inc. (ISSI) stock available at utmel
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IS61LV5128-10B详情
Integrated Silicon Solution, Inc. (ISSI) IS61LV5128-10B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
36
Manufacturer Part Number
IS61LV5128-10B
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
BGA
Package Description
8 X 10 MM, MINI, BGA-36
Risk Rank
5.39
Access Time-Max
10 ns
Moisture Sensitivity Levels
3
Number of Words
524288 words
Number of Words Code
512000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LFBGA
Package Equivalence Code
BGA36,6X8,30
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
未说明
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
0.75 mm
Reach合规守则
compliant
引脚数量
36
JESD-30代码
R-PBGA-B36
资历状况
不合格
电源电压-最大值(Vsup)
3.63 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.145 mA
组织结构
512KX8
输出特性
3-STATE
座位高度-最大
1.35 mm
内存宽度
8
待机电流-最大值
0.01 A
记忆密度
4194304 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
3.14 V
长度
10 mm
宽度
8 mm
IS61LV5128-10B拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







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