Integrated Silicon Solution, Inc. (ISSI) IS61NLP12836EC-200TQL
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IS61NLP12836EC-200TQL
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IS61NLP12836EC-200TQL datasheet pdf and Integrated Circuits (ICs) product details from Integrated Silicon Solution, Inc. (ISSI) stock available at utmel
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IS61NLP12836EC-200TQL详情
Integrated Silicon Solution, Inc. (ISSI) IS61NLP12836EC-200TQL重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
100
Manufacturer Part Number
IS61NLP12836EC-200TQL
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
QFP
Package Description
LQFP, QFP100,.63X.87
Risk Rank
5.7
Access Time-Max
3.1 ns
Clock Frequency-Max (fCLK)
200 MHz
Moisture Sensitivity Levels
3
Number of Words
131072 words
Number of Words Code
128000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LQFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
10
JESD-609代码
e3
ECCN 代码
3A991.B.2.A
端子表面处理
Matte Tin (Sn)
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.65 mm
Reach合规守则
compliant
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
2.5/3.3,3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.21 mA
组织结构
128KX36
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
36
待机电流-最大值
0.08 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
长度
20 mm
宽度
14 mm
IS61NLP12836EC-200TQL拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







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