Integrated Silicon Solution, Inc. (ISSI) IS61WV25616EFBLL-10BLI
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IS61WV25616EFBLL-10BLI
1266-IS61WV25616EFBLL-10BLI
存储器
mBGA-48
大陆
立即发货

SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v /-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS
--最小包装量--
IS61WV25616EFBLL-10BLI详情
Integrated Silicon Solution, Inc. (ISSI) IS61WV25616EFBLL-10BLI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
包装/外壳
mBGA-48
安装类型
表面贴装
供应商器件包装
48-TFBGA (6x8)
RoHS
Details
Maximum Clock Frequency
-
Interface Type
Parallel
Supply Voltage-Min
2.4 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Mounting Styles
SMD/SMT
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
480
Package
Bulk
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Memory Types
Volatile
Supply Voltage-Max
3.6 V
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
IS61WV25616EFBLL-10BLI
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Risk Rank
5.65
包装
Tray
系列
IS61WV25616EFBLL
操作温度
-40°C ~ 85°C (TA)
类型
Asynchronous
技术
SRAM - Asynchronous
电压 - 供电
2.4V ~ 3.6V
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
内存大小
4 Mbit
电源电流-最大值
35 mA
访问时间
10 ns
内存格式
SRAM
内存接口
Parallel
组织结构
256 k x 16
写入周期时间 - 字符、页面
10ns
内存IC类型
标准SRAM
组织的记忆
256K x 16
IS61WV25616EFBLL-10BLI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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