Integrated Silicon Solution, Inc. (ISSI) IS61WV25616FALL-10BLI-TR
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IS61WV25616FALL-10BLI-TR
1266-IS61WV25616FALL-10BLI-TR
存储器
BGA-48
大陆
立即发货

SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,1.65V-2.2V, 10ns, 48 Ball mBGA (6x8 mm), RoHS
--最小包装量--
IS61WV25616FALL-10BLI-TR详情
Integrated Silicon Solution, Inc. (ISSI) IS61WV25616FALL-10BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-48
安装类型
表面贴装
供应商器件包装
48-TFBGA (6x8)
RoHS
Details
Interface Type
Parallel
Supply Voltage-Min
1.65 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Mounting Styles
SMD/SMT
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
2500
Package
Tape & Reel (TR)
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Memory Types
Volatile
Supply Voltage-Max
2.2 V
包装
Reel
系列
IS61WV25616FALL
操作温度
-40°C ~ 85°C (TA)
类型
Asynchronous
技术
SRAM - Asynchronous
电压 - 供电
1.65V ~ 2.2V
内存大小
4 Mbit
电源电流-最大值
25 mA
访问时间
10 ns
内存格式
SRAM
内存接口
Parallel
组织结构
256 k x 16
写入周期时间 - 字符、页面
10ns
组织的记忆
256K x 16
IS61WV25616FALL-10BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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