Integrated Silicon Solution, Inc. (ISSI) IS62WV6416DALL-55BLI
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IS62WV6416DALL-55BLI
1266-IS62WV6416DALL-55BLI
存储器
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大陆
立即发货

SRAM 1M, 1.65-2.2V, Async 64Kx16, 55ns,L-Power
1最小包装量--
IS62WV6416DALL-55BLI详情
Integrated Silicon Solution, Inc. (ISSI) IS62WV6416DALL-55BLI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
引脚数
48
终端数量
48
RoHS
Details
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
480
Tradename
PowerSaver
Package Description
TFBGA, BGA48,6X8,30
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Moisture Sensitivity Levels
3
Number of Words Code
64000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA48,6X8,30
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
40
Access Time-Max
55 ns
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
IS62WV6416DALL-55BLI
Number of Words
65536 words
Package Code
TFBGA
Package Shape
RECTANGULAR
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Risk Rank
5.72
Part Package Code
DSBGA
系列
IS62WV6416DALL
JESD-609代码
e1
无铅代码
有
ECCN 代码
EAR99
端子表面处理
锡银铜
HTS代码
8542.32.00.41
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.75 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B48
资历状况
不合格
电源
1.8/2 V
温度等级
INDUSTRIAL
操作模式
ASYNCHRONOUS
电源电流-最大值
0.007 mA
组织结构
64KX16
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
16
待机电流-最大值
0.000004 A
记忆密度
1048576 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
1.2 V
电压 - 供电 (最大值)
2.2 V
电压 - 供电 (最小值)
1.65 V
宽度
6 mm
长度
8 mm
IS62WV6416DALL-55BLI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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