Integrated Silicon Solution, Inc. (ISSI) IS66WV51216DALL-70BLI-TR
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IS66WV51216DALL-70BLI-TR
1266-IS66WV51216DALL-70BLI-TR
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PSRAM Async 8M-Bit 512K X 16 70ns 48-Pin TFBGA T/R (Alt: IS66WV51216DALL-70BLI-TR)
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IS66WV51216DALL-70BLI-TR详情
Integrated Silicon Solution, Inc. (ISSI) IS66WV51216DALL-70BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
48
Manufacturer Part Number
IS66WV51216DALL-70BLI-TR
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Package Description
TFBGA, BGA48,6X8,30
Risk Rank
5.57
Access Time-Max
70 ns
Moisture Sensitivity Levels
1
Number of Words
524288 words
Number of Words Code
512000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA48,6X8,30
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Nom (Vsup)
1.8 V
Reflow Temperature-Max (s)
未说明
JESD-609代码
e3
无铅代码
有
端子表面处理
哑光锡
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
0.75 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B48
资历状况
不合格
电源电压-最大值(Vsup)
1.95 V
电源
1.8 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
1.7 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.025 mA
组织结构
512KX16
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
16
待机电流-最大值
0.00012 A
记忆密度
8388608 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
特殊应用Sram
长度
8 mm
宽度
6 mm
IS66WV51216DALL-70BLI-TR拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







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