Integrated Silicon Solution, Inc. (ISSI) IS66WVH8M8DBLL-100B1LI-TR
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IS66WVH8M8DBLL-100B1LI-TR
1266-IS66WVH8M8DBLL-100B1LI-TR
存储器
TFBGA-24
大陆
立即发货

DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS
1最小包装量--
IS66WVH8M8DBLL-100B1LI-TR详情
Integrated Silicon Solution, Inc. (ISSI) IS66WVH8M8DBLL-100B1LI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TFBGA-24
安装类型
表面贴装
供应商器件包装
24-TFBGA (6x8)
RoHS
Details
Mounting Styles
SMD/SMT
Maximum Clock Frequency
100 MHz
Supply Voltage-Min
2.7 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Factory Pack QuantityFactory Pack Quantity
2500
Package
Tape & Reel (TR)
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Memory Types
Volatile
Supply Voltage-Max
3.6 V
包装
Reel
操作温度
-40°C ~ 85°C (TA)
系列
-
类型
HyperRAM
技术
PSRAM (Pseudo SRAM)
电压 - 供电
1.7V ~ 1.95V, 2.7V ~ 3.6V
内存大小
64 Gbit
时钟频率
100 MHz
访问时间
40 ns
内存格式
PSRAM
内存接口
HyperBus
数据总线宽度
8 bit
组织结构
8 M x 8
写入周期时间 - 字符、页面
40ns
组织的记忆
8M x 8
IS66WVH8M8DBLL-100B1LI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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