International Rectifier IRF8301MTRPBF

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

外壳材料

1

Type of module

IGBT

Semiconductor structure

transistor/transistor

Max. off-state voltage

650V

Collector current

300A

Case

SEMITRANS3

Electrical mounting

FASTON connectors,

Gate-emitter voltage

±20V

Pulsed collector current

900A

Mechanical mounting

screw

Gross weight

325 g

Rohs Code

有

Part Life Cycle Code

Transferred

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Package Description

MT, ISOMETRIC-3

Drain Current-Max (ID)

34 A

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

ECCN 代码

EAR99

附加功能

超低电阻

端子位置

BOTTOM

终端形式

无铅

Reach合规守则

compliant

JESD-30代码

R-XBCC-N3

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

拓扑

IGBT half-bridge

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.0015 Ω

脉冲漏极电流-最大值(IDM)

250 A

DS 击穿电压-最小值

30 V

雪崩能量等级（Eas）

260 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

89 W

第二个连接器加载的位置数

for UPS,