Intersil HUF76139S3S

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

RoHS

Non-Compliant

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-40 °C

Operating Temperature-Max

150 °C

Manufacturer Part Number

HUF76139S3S

Turn-on Time-Max (ton)

120 ns

Package Shape

RECTANGULAR

Manufacturer

安森美半导体

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ON SEMICONDUCTOR

Turn-off Time-Max (toff)

218 ns

Risk Rank

5.71

Drain Current-Max (ID)

75 A

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

compliant

JESD-30代码

R-PSSO-G2

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-263AB

最大漏极电流 (Abs) (ID)

75 A

漏极-源极导通最大电阻

0.0075 Ω

DS 击穿电压-最小值

30 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

165 W