Isahaya Electronics Corporation RT2N04M
- 收藏
- 对比
RT2N04M
1264-RT2N04M
晶体管 - 双极性晶体管(BJT)- 单个
--
大陆
立即发货

Transistor
1最小包装量--
RT2N04M详情
Isahaya Electronics Corporation RT2N04M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
5
晶体管元件材料
SILICON
Part Life Cycle Code
接触制造商
Ihs Manufacturer
ISAHAYA ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G5
Number of Elements
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Transition Frequency-Nom (fT)
200 MHz
ECCN 代码
EAR99
附加功能
BUILT IN BIAS RESISTOR RATIO IS 1
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
unknown
JESD-30代码
R-PDSO-G5
配置
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
最大耗散功率(Abs)
0.15 W
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
50
集电极-发射器电压-最大值
50 V
VCEsat-最大值
0.3 V
环境耗散-最大值
0.15 W
RT2N04M拓展信息
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation







哦! 它是空的。