ISC H5N2502CF

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Drain Current-Max (ID)

18 A

Part Package Code

TO-220CF

Risk Rank

5.84

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Part Life Cycle Code

Obsolete

Number of Elements

1

Manufacturer

Renesas Electronics Corporation

Package Shape

RECTANGULAR

Manufacturer Part Number

H5N2502CF

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Style

FLANGE MOUNT

Package Description

TO-220CFM, 3 PIN

ECCN 代码

EAR99

子类别

FET 通用电源

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

ISOLATED

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

18 A

漏极-源极导通最大电阻

0.105 Ω

脉冲漏极电流-最大值(IDM)

72 A

DS 击穿电压-最小值

250 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

35 W