IS43LD32640C-18BLI详情
ISSI IS43LD32640C-18BLI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
134-TFBGA
供应商器件包装
134-TFBGA (10x11.5)
Package
Tray
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Memory Types
Volatile
RoHS
Details
Brand
ISSI
Manufacturer
ISSI
Factory Pack QuantityFactory Pack Quantity
171
Mounting Styles
SMD/SMT
操作温度
-40°C ~ 85°C (TC)
系列
-
子类别
Memory & Data Storage
技术
SDRAM - Mobile LPDDR2-S4
电压 - 供电
1.14V ~ 1.3V, 1.7V ~ 1.95V
内存大小
2Gbit
时钟频率
533 MHz
访问时间
5.5 ns
内存格式
DRAM
内存接口
HSUL_12
写入周期时间 - 字符、页面
15ns
产品类别
DRAM
产品类别
DRAM
组织的记忆
64M x 32
IS43LD32640C-18BLI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc








哦! 它是空的。