IS61NLF51236-7.5B3详情
ISSI IS61NLF51236-7.5B3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
10 Weeks
表面安装
YES
引脚数
165
终端数量
165
Package Description
TBGA, BGA165,11X15,40
Package Style
GRID ARRAY, THIN PROFILE
Number of Words Code
512000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA165,11X15,40
Reflow Temperature-Max (s)
未说明
Access Time-Max
7.5 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
IS61NLF51236-7.5B3
Clock Frequency-Max (fCLK)
117 MHz
Number of Words
524288 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
TBGA
Package Shape
RECTANGULAR
Manufacturer
Integrated Silicon Solution Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Risk Rank
5.3
Part Package Code
BGA
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
FLOW-THROUGH ARCHITECTURE
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B165
资历状况
不合格
电源
2.5/3.3,3.3 V
温度等级
COMMERCIAL
操作模式
SYNCHRONOUS
电源电流-最大值
0.425 mA
组织结构
512KX36
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
36
待机电流-最大值
0.06 A
记忆密度
18
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
电压 - 供电 (最大值)
3.465 V
电压 - 供电 (最小值)
3.135 V
宽度
13 mm
长度
15 mm
IS61NLF51236-7.5B3拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc








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