注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥53.717884
10
¥50.677248
100
¥47.808723
500
¥45.102569
1000
¥42.549597
IS66WVH8M8DBLL-100B1LI详情
ISSI IS66WVH8M8DBLL-100B1LI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
24-TBGA
供应商器件包装
24-TFBGA (6x8)
Package
Tray
厂商
ISSI, Integrated Silicon Solution Inc
Product Status
活跃
Memory Types
Volatile
Maximum Clock Frequency
100 MHz
Maximum Operating Temperature
+ 85 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
- 40 C
Supply Voltage-Min
2.7 V
Mounting Styles
SMD/SMT
操作温度
-40°C ~ 85°C (TA)
系列
-
类型
HyperRAM
技术
PSRAM (Pseudo SRAM)
电压 - 供电
2.7V ~ 3.6V
内存大小
64Mbit
时钟频率
100 MHz
访问时间
40 ns
内存格式
PSRAM
内存接口
HyperBus
数据总线宽度
8 bit
组织结构
8 M x 8
写入周期时间 - 字符、页面
40ns
组织的记忆
8M x 8
IS66WVH8M8DBLL-100B1LI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







哦! 它是空的。